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The smart diode array - chips in the deep-submicron technologies


An SDA detector with small pixels (25x25 mikrometer) in 180nm AMS HV-technology. The readout is of rolling-shutter type. Correlated double-sampling (CDS) is implemented in the pixels using CMOS electronics. The pixel output signals are digitized by 128 on-chip ADCs. The readout electronic has been optimized for a fast readout and a low power consumption.


The detector has been successfully tested using various radioactive sources. The signal and noise have been estimated. The results are preliminary.

Photograph of the HVPixel chip.
Pixel schematics.
3D layout of four HVPixel-s made by Gds2Pov software.
Fe55 spectrum measured by HPixel matrix.


The first SDA-detector implemented in a low-voltage (UMC 65nm) CMOS technology. The pixel size is only 2.5 x 2.5 micrometers. We measure a very low noise - an effect of the small diode capacitances. The pixel electronics is based on 4 PMOS transistors, the pixel output signal is current. The readout is of rolling-shutter type, the column signals are compensated for offsets on the chip using 8-bit DACs and compared with a threshold.


The sensor has been successfully tested using various radioactive sources. Shadow images of small objects have been recorded. Noise is very low (~20e). The results are preliminary.

Photograph of the SDS chip in 65nm UMC technology.
3D layout of nine SDS-pixels made by Gds2Pov software.
Shadow image of a 25 micrometer wide golden wire obtained with the SDS chip and the Fe55 x-ray source.

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