by J. Treis, P. Fischer, O. Halker, M. Harter, S. Herrmann, R. Kohrs, H. Kruger, P. Lechner, G. Lutz, I. Peric, M. Porro, R. H. Richter, L. Struder, M. Trimpl and N. Wermes
Reference:
DEPMOSFET active pixel sensor prototypes for the XEUS wide field imager (J. Treis, P. Fischer, O. Halker, M. Harter, S. Herrmann, R. Kohrs, H. Kruger, P. Lechner, G. Lutz, I. Peric, M. Porro, R. H. Richter, L. Struder, M. Trimpl and N. Wermes), In Nuclear Science Symposium Conference Record, 2004 IEEE, volume 2, 2004.
Bibtex Entry:
@InProceedings{1462378,
author = "J. Treis and P. Fischer and O. Halker and M. Harter
and S. Herrmann and R. Kohrs and H. Kruger and P.
Lechner and G. Lutz and I. Peric and M. Porro and R. H.
Richter and L. Struder and M. Trimpl and N. Wermes",
booktitle = "Nuclear Science Symposium Conference Record, 2004
IEEE",
title = "{DEPMOSFET} active pixel sensor prototypes for the
{XEUS} wide field imager",
year = "2004",
volume = "2",
pages = "1019--1023 Vol. 2",
keywords = "CMOS integrated circuits;MOSFET;X-ray detection;X-ray
spectrometers;data acquisition;nuclear
electronics;position sensitive particle
detectors;prototypes;readout electronics;semiconductor
counters;semiconductor device noise;75 mum;8-fold
correlated double sampling;CAMEX type multiplexer
IC;CAMEX type parallel CMOS amplifier;DEPMOSFET active
pixel sensor prototypes;DEPMOSFET device;DEPMOSFET
matrix design variants;SWITCHER type control IC;XEUS
wide field imager;charge collection efficiency;data
acquisition system;depleted p-channel MOSFET;device
readout;energy resolution;front-end IC;high voltage
CMOS technology;matrix row;noise;pixel size;prototype
production;random pixel accessibility;readout
hybrid;readout modes;readout speed;signal
processing;spectral resolution;CMOS technology;Data
acquisition;Energy resolution;Image
sensors;Laboratories;MOSFET
circuits;Pixel;Production;Prototypes;Sensor phenomena
and characterization",
doi = "10.1109/NSSMIC.2004.1462378",
ISSN = "1082-3654",
month = oct,
}