Publikationen P. Fischer & Arbeitsgruppe

by Andricek L., Fischer P., Giesen F., Heinzinger K., Herrmann S., Herz D., Karagounis M., Kohrs R., Krüger H., Lechner P., Lutz G., Moser H. G., Perić I., Reuen L., Richter R. H., Sandow C., Schnecke M., Schopper F., Struder L., Törne E. von, Treis J., Trimpl M., Velthuis J., Wermes N. and Wolfel S.

Reference:

The MOS-type DEPFET pixel sensor for the ILC environment (Andricek L., et al.), In Nuclear Science Symposium Conference Record, 2005 IEEE, volume 1, 2005.

Bibtex Entry:

@InProceedings{1596212,
  author =       "L. Andricek and P. Fischer and F. Giesen and K.
                 Heinzinger and S. Herrmann and D. Herz and M.
                 Karagounis and R. Kohrs and H. Krüger and P. Lechner
                 and G. Lutz and H. G. Moser and I. Perić and L. Reuen
                 and R. H. Richter and C. Sandow and M. Schnecke and F.
                 Schopper and L. Struder and E. von Törne and J. Treis
                 and M. Trimpl and J. Velthuis and N. Wermes and S.
                 Wolfel",
  title =        "The {MOS-type} {DEPFET} pixel sensor for the {ILC}
                 environment",
  booktitle =    "Nuclear Science Symposium Conference Record, 2005
                 IEEE",
  year =         "2005",
  volume =       "1",
  pages =        "83--87",
  month =        oct,
  doi =          "10.1109/NSSMIC.2005.1596212",
  ISSN =         "1095-7863",
  keywords =     "MOSFET;X-ray effects;gamma-ray effects;position
                 sensitive particle detectors;silicon radiation
                 detectors;ILC environment;International Linear
                 Collider;MOS-type {DEPFET} active pixel
                 sensors;beam-beam interactions;biasing
                 conditions;double metal/double poly technology;electron
                 pair production;hard X-ray irradiation;hard gamma ray
                 irradiation;ionizing radiation;linear MOS-type {DEPFET}
                 sensors;pixel array read out;positive oxide
                 charges;positron+electron pair background;threshold
                 voltage;ultrathin fully depleted sensors;vertex
                 detector;Detectors;Electrons;Ionization;Ionizing
                 radiation;Ionizing radiation sensors;MOS devices;Paper
                 technology;Sensor arrays;Threshold voltage;X-rays",
}